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AS4LC256K16E0-35JC - 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM

AS4LC256K16E0-35JC_2551636.PDF Datasheet

 
Part No. AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E0-45JC AS4LC256K16E0-45TC AS4LC256K16E0-60JC AS4LC256K16E0-60TC
Description 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM

File Size 522.34K  /  25 Page  

Maker

Alliance Semiconductor



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 Full text search : 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM


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List of Unclassifed Manufacturers
AS4LC256K16E0-45JC AS4LC256K16E0-35JC AS4LC256K16E 3.3V 256K X 16 CMOS DRAM (EDO)
ALSC[Alliance Semiconductor Corporation]
UT51C164 UT51C164JC-35 UT51C164MC-60 UT51C164JC-40 256K X 16 BIT EDO DRAM
UTRON Technology
ETC[ETC]
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
Hitachi Semiconductor
AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 4M X 4 EDO DRAM, 60 ns, PDSO24
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1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
Integrated Silicon Solution, Inc.
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB3116165BSJ-70 HYB3116165BST-70 HYB3118165BSJ-70 1M X 16 EDO DRAM, 70 ns, PDSO42
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SIEMENS AG
 
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